Hiroshima University Syllabus

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Japanese
Academic Year 2026Year School/Graduate School School of Engineering
Lecture Code K6223020 Subject Classification Specialized Education
Subject Name 半導体プロセス工学
Subject Name
(Katakana)
ハンドウタイプロセスコウガク
Subject Name in
English
Semiconductor Process Engineering
Instructor TERAMOTO AKINOBU
Instructor
(Katakana)
テラモト アキノブ
Campus Higashi-Hiroshima Semester/Term 3rd-Year,  Second Semester,  3Term
Days, Periods, and Classrooms (3T) Mon7-10:ENG 115
Lesson Style Lecture Lesson Style
(More Details)
Face-to-face
 
Credits 2.0 Class Hours/Week 4 Language of Instruction B : Japanese/English
Course Level 4 : Undergraduate Advanced
Course Area(Area) 25 : Science and Technology
Course Area(Discipline) 12 : Electronics
Eligible Students B3
Keywords p-n junction, MOS device, integration, manufacturing process 
Special Subject for Teacher Education   Special Subject  
Class Status
within Educational
Program
(Applicable only to targeted subjects for undergraduate students)
Electronic Systems Program
(Abilities and Skills)
・Ability to apply fundamental concepts, knowledge, and methodologies in the field of electronic systems to specific and specialized problems 
Criterion referenced
Evaluation
(Applicable only to targeted subjects for undergraduate students)
Program of Electronic Devices and Systems
(Abilities and Skills)
・Ability to apply basic concepts, knowledge, and methods of electronics engineering to concrete/technical problems. 
Class Objectives
/Class Outline
Electronic Systems Program
(Abilities and Skills)
・Ability to apply fundamental concepts, knowledge, and methodologies in the field of electronic systems to specific and specialized problems 
Class Schedule lesson1 Review of Semiconductor Fundamentals
lesson2 Review of Semiconductor Fundamentals
lesson3 Review of Semiconductor Fundamentals
lesson4 p-n Junction
lesson5 p-n Junction
lesson6 Characteristics of MOS Structure
lesson7 Characteristics of MOS Diode
lesson8 MOS Transistor
lesson9 MOS Transistor/
lesson10 Report Assignments for previous lecture
lesson11 Overview of Integrated Circuit Manufacturing Processes
lesson12 Lithography & Etching
lesson13 Si Oxidation & Thin Film Formation
lesson14 Inpurity Difusion & Ion Implantation
lesson15 Limits of Miniaturization and the Future of LSIs

Reports: 10-40% , and Final Exam or Final Report: 60-90%  
Text/Reference
Books,etc.
1. S.M. Sze, et al., "Physics of Semiconductor Devices (4th ed.)," Wiey,  2021.
2. Y. Taur and T.-H. Ning, "Fundamentals of Modern VLSI Technology (3rd Ed.)," Cambridge University Press, 2022.
3. U. Hilleringmann, "Silicon Semiconductor Technology," Springer, 2023. 
PC or AV used in
Class,etc.
Handouts
(More Details)  
Learning techniques to be incorporated Quizzes/ Quiz format
Suggestions on
Preparation and
Review
You'll likely encounter many terms that are new to semiconductor processes. Please review them thoroughly while writing your report. 
Requirements  
Grading Method Reports: 10-40% , and Final Exam or Final Report: 60-90%  
Practical Experience Experienced  
Summary of Practical Experience and Class Contents based on it The course content is based on research conducted in semiconductor devices and processes at companies and universities, incorporating that experience. 
Message  
Other   
Please fill in the class improvement questionnaire which is carried out on all classes.
Instructors will reflect on your feedback and utilize the information for improving their teaching. 
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