Hiroshima University Syllabus

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Japanese
Academic Year 2024Year School/Graduate School Graduate School of Advanced Science and Engineering (Master's Course) Division of Advanced Science and Engineering Quantum Matter Program
Lecture Code WSP03100 Subject Classification Specialized Education
Subject Name LSI集積化工学
Subject Name
(Katakana)
エルエスアイシュウセキカコウガク
Subject Name in
English
LSI Devices and Process Engineering
Instructor KUROKI SHIN-ICHIRO,TERAMOTO AKINOBU,UCHIDA KATSUNORI
Instructor
(Katakana)
クロキ シンイチロウ,テラモト アキノブ,ウチダ カツノリ
Campus Higashi-Hiroshima Semester/Term 1st-Year,  First Semester,  1Term
Days, Periods, and Classrooms (1T) Thur1-4:AdSM 401N
Lesson Style Lecture Lesson Style
(More Details)
 
Lecture and Training of Layout Design 
Credits 2.0 Class Hours/Week   Language of Instruction B : Japanese/English
Course Level 6 : Graduate Advanced
Course Area(Area) 25 : Science and Technology
Course Area(Discipline) 12 : Electronics
Eligible Students Student in the master course
Keywords Process, LSI, MOS devices 
Special Subject for Teacher Education   Special Subject  
Class Status
within Educational
Program
(Applicable only to targeted subjects for undergraduate students)
 
Criterion referenced
Evaluation
(Applicable only to targeted subjects for undergraduate students)
 
Class Objectives
/Class Outline
Understanding of physical and chemical principles of LSI fabrication processes such as oxidation, diffusion, thin-film deposition, lithography, etching, vacuum processes and so on. Next, state-of -the-art technologies for current MOS devices are learned. In the latter part the training of design of SRAM is carried out and deeply understand the technologies and theories. 
Class Schedule Lesson1 Review of LSI Fabrication Process and Exercise for MOSFETs
Lesson2 Miniaturization and Integration Technology of MOS Devices
Lesson3 Si Oxide (method, mechanism for Si oxidation)
Lesson4 Thin Film Formation (Si dioxide, nitride, metal, silicide)
Lesson5 Impurity Doping and Ion Implantation
Lesson6 Lithography (optical and electron beam) , Cleaning
Lesson7 Etching (Wet-chemical, plasma), CMP and Damacene Process
Lesson8 Structure of MOS Deices and Its Fabrication Process (part I)
Lesson9 Structure of MOS Deices and Its Fabrication Process (part II)
Lesson10 Basic Layout of SRAM Cell and Fabrication Process (part I)
Lesson11 Basic Layout of SRAM Cell and Fabrication Process (part I)  
Lesson12 Technology for High-Density SRAM Cell 
Lesson13 Introduction of DRAM Operation 
Lesson14 Integrated Circuits and their Reliability
Lesson15 Future Prospect of Si Integration Technology 

Quiz in the class, submission of reports. 
Text/Reference
Books,etc.
Handouts are distributed, reference books are introduced in the class. 
PC or AV used in
Class,etc.
 
(More Details) Projector main, vido clips. 
Learning techniques to be incorporated  
Suggestions on
Preparation and
Review
Review for each class. 
Requirements  
Grading Method Report (~60%), quiz (~40%)  
Practical Experience  
Summary of Practical Experience and Class Contents based on it  
Message  
Other   
Please fill in the class improvement questionnaire which is carried out on all classes.
Instructors will reflect on your feedback and utilize the information for improving their teaching. 
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