WSP06400 Advanced Semiconductor Characterization Techniques

Hiroshima University Syllabus

Japanese

Academic Year 2026Year School/Graduate School Graduate School of Advanced Science and Engineering (Master's Course) Division of Advanced Science and Engineering Quantum Matter Program

Lecture Code WSP06400 Subject Classification Specialized Education

Subject Name 半導体評価技術特論

Subject Name
（Katakana）ハンドウタイヒョウカギジュツトクロン

Subject Name in
English Advanced Semiconductor Characterization Techniques

Instructor HANAFUSA HIROAKI

Instructor
(Katakana) ハナフサ　ヒロアキ

Campus Higashi-Hiroshima Semester/Term 1st-Year, Second Semester, 3Term

Days, Periods, and Classrooms (3T) Weds3-6：AdSM 405N

Lesson Style Lecture Lesson Style
(More Details) Face-to-face

Lecture-based, Exercise-based

Credits 2.0 Class Hours/Week 4 Language of Instruction B : Japanese／English

Course Level 5 : Graduate Basic

Course Area（Area） 25 : Science and Technology

Course Area（Discipline） 12 : Electronics

Eligible Students The course is primarily targeted at students in the Quantum Matter Science Program (Engineering), but the content is expected to be broadly applicable.

Keywords Semiconductor characterization techniques, semiconductor material evaluation, device characterization, material property analysis, measurement principles, selection of measurement methods

Special Subject for Teacher Education 　 Special Subject 　

Class Status
within Educational
Program
(Applicable only to targeted subjects for undergraduate students)
Criterion referenced
Evaluation
(Applicable only to targeted subjects for undergraduate students)

Class Objectives
/Class Outline Theme and Learning Objectives

This course systematically introduces the major physical measurement techniques used for the characterization of semiconductor materials and devices, covering both fundamental principles and practical applications.
Through understanding the measurement targets, applicable ranges, advantages, and limitations of each characterization technique, students will develop the ability to select appropriate evaluation methods for investigating material properties and for semiconductor device development.

Course Overview
This course provides a systematic overview of advanced characterization techniques for semiconductor materials and devices. Topics include structural analysis using X-ray diffraction and electron microscopy, compositional analysis using techniques such as SIMS and XPS, local probe methods including AFM, electrical measurements (Hall effect, carrier lifetime measurements, and I–V and C–V characterization), and optical techniques such as photoluminescence (PL), Raman spectroscopy, and infrared spectroscopy.
In addition to the fundamental principles of each method, practical applications in semiconductor research and recent developments in characterization technologies will be discussed. The course aims to enable students to select and effectively utilize appropriate evaluation techniques for their own research topics. Assessment will be based on a final report.

Class Schedule Lecture 1 – Orientation
Role of semiconductor characterization techniques, research and industrial applications, overview of the course.

Lecture 2 – X-ray Diffraction (XRD)
Fundamentals and applications of crystal structure analysis (thin film analysis, stress evaluation).

Lecture 3 – Electron-beam Structural Characterization I (SEM, Electron Diffraction)
Image formation in SEM and crystal analysis using electron diffraction.

Lecture 4 – Electron-beam Structural Characterization II (TEM, RHEED)
Principles and applications of TEM, surface structure analysis using RHEED.

Lecture 5 – Ion and Particle Beam Analysis
Depth profiling and local analysis using techniques such as RBS and FIB.

Lecture 6 – Surface and Compositional Analysis
Compositional and chemical state analysis using SIMS and XPS.

Lecture 7 – Scanning Probe Microscopy
Characteristics and limitations of local probe techniques such as AFM and STM.

Lecture 8 – Electrical Characterization I
Resistivity measurement using the four-probe method and carrier characterization using the Hall effect.

Lecture 9 – Electrical Characterization II
Minority carrier lifetime measurement and trap level characterization (DLTS).

Lecture 10 – Device Characterization
I–V and C–V measurements and evaluation of MOS devices.

Lecture 11 – Optical Characterization I
Defect and stress analysis using photoluminescence and Raman spectroscopy.

Lecture 12 – Optical Characterization II
Thin film and optical constant analysis using infrared spectroscopy and ellipsometry.

Lecture 13 – Advanced Characterization Techniques
Combined characterization methods (e.g., Raman–AFM) and emerging approaches.

Lecture 14 – Comparative Overview and Method Selection
Characteristics and applicability of each technique and selection strategies for research problems.

Lecture 15 – Summary and Recent Developments
Recent research examples and future perspectives.

Whenever possible, students will have opportunities to see actual measurement and characterization instruments. Video materials demonstrating the measurement procedures will also be provided.

Text/Reference
Books,etc. ・斎藤進一編著『半導体評価技術』コロナ社
・Dieter K. Schroder、「Semiconductor Material and Device Characterization」、IEEE Press.

PC or AV used in
Class,etc. Handouts, Visual Materials

(More Details) Actual measurement and characterization instruments and demonstration videos

Learning techniques to be incorporated

Suggestions on
Preparation and
Review The principles of measurement and characterization introduced in this course are based on fundamental concepts typically learned at the undergraduate level. Students are encouraged to focus on understanding the underlying physical principles of each technique.

For both preparation and review, students should consider how the measurement and characterization methods discussed in each lecture could be applied to their own research and what types of information can be obtained from them.

Requirements Although applications in other fields will be introduced whenever possible, the course will mainly focus on measurement and characterization techniques for semiconductor materials and devices.

Grading Method No final examination will be conducted; evaluation will be based on a report　(100%).

Practical Experience

Summary of Practical Experience and Class Contents based on it

Message

Other

Please fill in the class improvement questionnaire which is carried out on all classes.
Instructors will reflect on your feedback and utilize the information for improving their teaching.

Academic Year	2026Year	School/Graduate School	Graduate School of Advanced Science and Engineering (Master's Course) Division of Advanced Science and Engineering Quantum Matter Program
Lecture Code	WSP06400	Subject Classification	Specialized Education
Subject Name	半導体評価技術特論
Subject Name （Katakana）	ハンドウタイヒョウカギジュツトクロン
Subject Name in English	Advanced Semiconductor Characterization Techniques
Instructor	HANAFUSA HIROAKI
Instructor (Katakana)	ハナフサ　ヒロアキ
Campus	Higashi-Hiroshima	Semester/Term	1st-Year, Second Semester, 3Term
Days, Periods, and Classrooms	(3T) Weds3-6：AdSM 405N
Lesson Style	Lecture	Lesson Style (More Details)	Face-to-face
Lecture-based, Exercise-based
Credits	2.0	Class Hours/Week	4	Language of Instruction	B : Japanese／English
Course Level	5 : Graduate Basic
Course Area（Area）	25 : Science and Technology
Course Area（Discipline）	12 : Electronics
Eligible Students	The course is primarily targeted at students in the Quantum Matter Science Program (Engineering), but the content is expected to be broadly applicable.
Keywords	Semiconductor characterization techniques, semiconductor material evaluation, device characterization, material property analysis, measurement principles, selection of measurement methods
Special Subject for Teacher Education		Special Subject
Class Status within Educational Program (Applicable only to targeted subjects for undergraduate students)
Criterion referenced Evaluation (Applicable only to targeted subjects for undergraduate students)
Class Objectives /Class Outline	Theme and Learning Objectives This course systematically introduces the major physical measurement techniques used for the characterization of semiconductor materials and devices, covering both fundamental principles and practical applications. Through understanding the measurement targets, applicable ranges, advantages, and limitations of each characterization technique, students will develop the ability to select appropriate evaluation methods for investigating material properties and for semiconductor device development. Course Overview This course provides a systematic overview of advanced characterization techniques for semiconductor materials and devices. Topics include structural analysis using X-ray diffraction and electron microscopy, compositional analysis using techniques such as SIMS and XPS, local probe methods including AFM, electrical measurements (Hall effect, carrier lifetime measurements, and I–V and C–V characterization), and optical techniques such as photoluminescence (PL), Raman spectroscopy, and infrared spectroscopy. In addition to the fundamental principles of each method, practical applications in semiconductor research and recent developments in characterization technologies will be discussed. The course aims to enable students to select and effectively utilize appropriate evaluation techniques for their own research topics. Assessment will be based on a final report.
Class Schedule	Lecture 1 – Orientation Role of semiconductor characterization techniques, research and industrial applications, overview of the course. Lecture 2 – X-ray Diffraction (XRD) Fundamentals and applications of crystal structure analysis (thin film analysis, stress evaluation). Lecture 3 – Electron-beam Structural Characterization I (SEM, Electron Diffraction) Image formation in SEM and crystal analysis using electron diffraction. Lecture 4 – Electron-beam Structural Characterization II (TEM, RHEED) Principles and applications of TEM, surface structure analysis using RHEED. Lecture 5 – Ion and Particle Beam Analysis Depth profiling and local analysis using techniques such as RBS and FIB. Lecture 6 – Surface and Compositional Analysis Compositional and chemical state analysis using SIMS and XPS. Lecture 7 – Scanning Probe Microscopy Characteristics and limitations of local probe techniques such as AFM and STM. Lecture 8 – Electrical Characterization I Resistivity measurement using the four-probe method and carrier characterization using the Hall effect. Lecture 9 – Electrical Characterization II Minority carrier lifetime measurement and trap level characterization (DLTS). Lecture 10 – Device Characterization I–V and C–V measurements and evaluation of MOS devices. Lecture 11 – Optical Characterization I Defect and stress analysis using photoluminescence and Raman spectroscopy. Lecture 12 – Optical Characterization II Thin film and optical constant analysis using infrared spectroscopy and ellipsometry. Lecture 13 – Advanced Characterization Techniques Combined characterization methods (e.g., Raman–AFM) and emerging approaches. Lecture 14 – Comparative Overview and Method Selection Characteristics and applicability of each technique and selection strategies for research problems. Lecture 15 – Summary and Recent Developments Recent research examples and future perspectives. Whenever possible, students will have opportunities to see actual measurement and characterization instruments. Video materials demonstrating the measurement procedures will also be provided.
Text/Reference Books,etc.	・斎藤進一編著『半導体評価技術』コロナ社・Dieter K. Schroder、「Semiconductor Material and Device Characterization」、IEEE Press.
PC or AV used in Class,etc.	Handouts, Visual Materials
(More Details)	Actual measurement and characterization instruments and demonstration videos
Learning techniques to be incorporated
Suggestions on Preparation and Review	The principles of measurement and characterization introduced in this course are based on fundamental concepts typically learned at the undergraduate level. Students are encouraged to focus on understanding the underlying physical principles of each technique. For both preparation and review, students should consider how the measurement and characterization methods discussed in each lecture could be applied to their own research and what types of information can be obtained from them.
Requirements	Although applications in other fields will be introduced whenever possible, the course will mainly focus on measurement and characterization techniques for semiconductor materials and devices.
Grading Method	No final examination will be conducted; evaluation will be based on a report　(100%).
Practical Experience
Summary of Practical Experience and Class Contents based on it
Message
Other
Please fill in the class improvement questionnaire which is carried out on all classes. Instructors will reflect on your feedback and utilize the information for improving their teaching.

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