WSP05700 Advanced Topics on Material Analysis and Basics of Plasma Processing for Nano Devices

Hiroshima University Syllabus

Japanese

Academic Year 2025Year School/Graduate School Graduate School of Advanced Science and Engineering (Master's Course) Division of Advanced Science and Engineering Quantum Matter Program

Lecture Code WSP05700 Subject Classification Specialized Education

Subject Name ナノデバイス材料解析・プラズマ加工特論

Subject Name
（Katakana）ナノデバイスザイリョウカイセキ・プラズマカコウトクロン

Subject Name in
English Advanced Topics on Material Analysis and Basics of Plasma Processing for Nano Devices

Instructor WAKABAYASHI HITOSHI,See the "Class Schedule" of the syllabus

Instructor
(Katakana) ワカバヤシ　ヒトシ,シラバスジュギョウケイカクトウサンショウ

Campus Across Campuses (videoconferencing, etc.) Semester/Term 1st-Year, First Semester, 2Term

Days, Periods, and Classrooms (2T) Mon1-2,Thur1-2

Lesson Style Lecture Lesson Style
(More Details) Online (simultaneous interactive)

Credits 2.0 Class Hours/Week 4 Language of Instruction E : English

Course Level 6 : Graduate Advanced

Course Area（Area） 25 : Science and Technology

Course Area（Discipline） 12 : Electronics

Eligible Students 博士課程前期学生

Keywords Semiconductor, LSI, device, process, miniaturization, plasma, dry etching, microfabrication, crystal defect, structural analysis, surface analysis, optical properties, device reliability technology, physical property simulation, material informatics

Special Subject for Teacher Education 　 Special Subject 　

Class Status
within Educational
Program
(Applicable only to targeted subjects for undergraduate students)
Criterion referenced
Evaluation
(Applicable only to targeted subjects for undergraduate students)

Class Objectives
/Class Outline Future semiconductor devices are required to realize high-performance without variation by realizing nanometer-order fine pattern fabrication and technologies for controlling defects and interfaces at the atomic level. In this course, leading-edge researchers from industries will give lectures on topics topics from basics to advanced one about materials analysis technology and plasma processing/surface treatment technology, which are applied from R&D to manufacturing site in the industry.

Class Schedule Class 1
A-1: Defects in Semiconductors and their characterization techniques
To understand the basic properties of semiconductor nano materials and devices, and the purpose of characterization.

Class 2
P‐1: What is plasma?
Understanding the role of plasma processes in semiconductor device manufacturing

Class 3
A-2: Structural Characterization (1)
Explain the principles and basics of scanning and transmission electron microscopy

Class 4
P‐2: Control of neutral particles
Describes the motion of neutral particles in a plasma system

Class 5
A-3: Structural Characterization (2)
Explain the principle and basics of X-ray evaluation and 3D atom probe

Class 6
P‐3: Control of charged particles
Understand the relationship between the application of electric and magnetic fields and the motion of electrons and ions

Class 7
A-4: Surface Analysis
Explain the principles and basics of scanning probe microscopy, secondary ion mass spectrometry, and photoelectron spectroscopy.

Class 8
P‐4: Collision
Understanding collision reactions such as ionization and excitation of atoms and molecules.

Class 9
A-5: Electrical and Optical characterizations
Explain the principles and basics of electrical and optical characterizations.

Class 10
P‐5: Sheath and ion energy control
Understanding ion acceleration and its control mechanism for a substrate placed in a plasma.

Class 11
P‐6: Plasma systems
Understand the dry etching systems.

Class 12
A-6: Reliability issues in Semiconductor Devices
Explain device degradation phenomena and reliability evaluation techniques

Class 13
P‐7: Process control
Understand the current status and examples of plasma technology used in advanced device manufacturing.

Class 14
A-8 Materials Simulation and Materials Informatics
Promote understanding of the latest trends and future trends in material search methods.

Text/Reference
Books,etc. Textbook(s)：To distribute the hand-outs during class
Reference books, course materials, etc.：
・D.B. Bwillians: “Transmission Electron Microscopy: A Textbook for Materials Science”, Plenum Press (2009)
・S. Tomiya: “Chap. 7”Structural Defects in GaN-based Materials and their relation to GaN-based Laser diodes” in O. Ueda and S. J. Pearton (ed.) “Materials and Reliability Handbook for Semiconductor Optical and Electron Devices” Springer (2014)
・Michael K. Miller ：” Atom Probe Tomography: Analysis at the Atomic Level “, Springer (2000)
・Michael A. Lieberman,　“Principles of Plasma Discharges and Materials Processing”,　Wiley-Interscience (1994).

PC or AV used in
Class,etc.

(More Details)

Learning techniques to be incorporated

Suggestions on
Preparation and
Review The content of this course can be fully understood through lectures and solving report assignments. If you have any questions, please ask them on the day and proceed to the next lecture.

Requirements Students who are interested in analysis and process technologies in the industry are highly preferable.
This course is part of the Integrated Green-niX College program (a joint program with Institute of Science Tokyo, Toyohashi University of Technology, Nagaoka University of Technology and Meiji University, based on a memorandum of understanding for credit transfer related to semiconductor talent development). Please note that you cannot register for this course unless you have completed the special audit student application procedure at your respective university beforehand.

Grading Method Evaluation will be based on class attendance and assignment reports.

Practical Experience

Summary of Practical Experience and Class Contents based on it

Message

Other

Please fill in the class improvement questionnaire which is carried out on all classes.
Instructors will reflect on your feedback and utilize the information for improving their teaching.

Academic Year	2025Year	School/Graduate School	Graduate School of Advanced Science and Engineering (Master's Course) Division of Advanced Science and Engineering Quantum Matter Program
Lecture Code	WSP05700	Subject Classification	Specialized Education
Subject Name	ナノデバイス材料解析・プラズマ加工特論
Subject Name （Katakana）	ナノデバイスザイリョウカイセキ・プラズマカコウトクロン
Subject Name in English	Advanced Topics on Material Analysis and Basics of Plasma Processing for Nano Devices
Instructor	WAKABAYASHI HITOSHI,See the "Class Schedule" of the syllabus
Instructor (Katakana)	ワカバヤシ　ヒトシ,シラバスジュギョウケイカクトウサンショウ
Campus	Across Campuses (videoconferencing, etc.)	Semester/Term	1st-Year, First Semester, 2Term
Days, Periods, and Classrooms	(2T) Mon1-2,Thur1-2
Lesson Style	Lecture	Lesson Style (More Details)	Online (simultaneous interactive)

Credits	2.0	Class Hours/Week	4	Language of Instruction	E : English
Course Level	6 : Graduate Advanced
Course Area（Area）	25 : Science and Technology
Course Area（Discipline）	12 : Electronics
Eligible Students	博士課程前期学生
Keywords	Semiconductor, LSI, device, process, miniaturization, plasma, dry etching, microfabrication, crystal defect, structural analysis, surface analysis, optical properties, device reliability technology, physical property simulation, material informatics
Special Subject for Teacher Education		Special Subject
Class Status within Educational Program (Applicable only to targeted subjects for undergraduate students)
Criterion referenced Evaluation (Applicable only to targeted subjects for undergraduate students)
Class Objectives /Class Outline	Future semiconductor devices are required to realize high-performance without variation by realizing nanometer-order fine pattern fabrication and technologies for controlling defects and interfaces at the atomic level. In this course, leading-edge researchers from industries will give lectures on topics topics from basics to advanced one about materials analysis technology and plasma processing/surface treatment technology, which are applied from R&D to manufacturing site in the industry.
Class Schedule	Class 1 A-1: Defects in Semiconductors and their characterization techniques To understand the basic properties of semiconductor nano materials and devices, and the purpose of characterization. Class 2 P‐1: What is plasma? Understanding the role of plasma processes in semiconductor device manufacturing Class 3 A-2: Structural Characterization (1) Explain the principles and basics of scanning and transmission electron microscopy Class 4 P‐2: Control of neutral particles Describes the motion of neutral particles in a plasma system Class 5 A-3: Structural Characterization (2) Explain the principle and basics of X-ray evaluation and 3D atom probe Class 6 P‐3: Control of charged particles Understand the relationship between the application of electric and magnetic fields and the motion of electrons and ions Class 7 A-4: Surface Analysis Explain the principles and basics of scanning probe microscopy, secondary ion mass spectrometry, and photoelectron spectroscopy. Class 8 P‐4: Collision Understanding collision reactions such as ionization and excitation of atoms and molecules. Class 9 A-5: Electrical and Optical characterizations Explain the principles and basics of electrical and optical characterizations. Class 10 P‐5: Sheath and ion energy control Understanding ion acceleration and its control mechanism for a substrate placed in a plasma. Class 11 P‐6: Plasma systems Understand the dry etching systems. Class 12 A-6: Reliability issues in Semiconductor Devices Explain device degradation phenomena and reliability evaluation techniques Class 13 P‐7: Process control Understand the current status and examples of plasma technology used in advanced device manufacturing. Class 14 A-8 Materials Simulation and Materials Informatics Promote understanding of the latest trends and future trends in material search methods.
Text/Reference Books,etc.	Textbook(s)：To distribute the hand-outs during class Reference books, course materials, etc.：・D.B. Bwillians: “Transmission Electron Microscopy: A Textbook for Materials Science”, Plenum Press (2009) ・S. Tomiya: “Chap. 7”Structural Defects in GaN-based Materials and their relation to GaN-based Laser diodes” in O. Ueda and S. J. Pearton (ed.) “Materials and Reliability Handbook for Semiconductor Optical and Electron Devices” Springer (2014) ・Michael K. Miller ：” Atom Probe Tomography: Analysis at the Atomic Level “, Springer (2000) ・Michael A. Lieberman,　“Principles of Plasma Discharges and Materials Processing”,　Wiley-Interscience (1994).
PC or AV used in Class,etc.
(More Details)
Learning techniques to be incorporated
Suggestions on Preparation and Review	The content of this course can be fully understood through lectures and solving report assignments. If you have any questions, please ask them on the day and proceed to the next lecture.
Requirements	Students who are interested in analysis and process technologies in the industry are highly preferable. This course is part of the Integrated Green-niX College program (a joint program with Institute of Science Tokyo, Toyohashi University of Technology, Nagaoka University of Technology and Meiji University, based on a memorandum of understanding for credit transfer related to semiconductor talent development). Please note that you cannot register for this course unless you have completed the special audit student application procedure at your respective university beforehand.
Grading Method	Evaluation will be based on class attendance and assignment reports.
Practical Experience
Summary of Practical Experience and Class Contents based on it
Message
Other
Please fill in the class improvement questionnaire which is carried out on all classes. Instructors will reflect on your feedback and utilize the information for improving their teaching.

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