Japanese

Academic Year	2024Year	School/Graduate School	School of Engineering
Lecture Code	K6223020	Subject Classification	Specialized Education
Subject Name	半導体プロセス工学
Subject Name （Katakana）	ハンドウタイプロセスコウガク
Subject Name in English	Semiconductor Process Engineering
Instructor	NAKAJIMA ANRI
Instructor (Katakana)	ナカジマ　アンリ
Campus	Higashi-Hiroshima	Semester/Term	3rd-Year,  Second Semester,  3Term
Days, Periods, and Classrooms	(3T) Mon7-10：ENG 102
Lesson Style	Lecture	Lesson Style (More Details)
			Details will be announced later.
Credits	2.0	Class Hours/Week		Language of Instruction	J : Japanese
Course Level	4 : Undergraduate Advanced
Course Area（Area）	25 : Science and Technology
Course Area（Discipline）	12 : Electronics
Eligible Students	Junior of Cluster 2 and others
Keywords	p-n junction, MOS devices, integration, fabrication process, SDG_09
Special Subject for Teacher Education		Special Subject
Class Status within Educational Program (Applicable only to targeted subjects for undergraduate students)	This course is positioned in the field of  "Integrated Systems." The students are able to deepen knowlege and to understand the specialized technologies concerning semiconductor process engineering.   The following classes are preferred to learn before taking this class. Electromagnetism I, Electromagnetism II, Fundamentals of electronic physical properties, Semicondcutor devices, Fundamentals of integrated circuits, Crystal engineering, Solid state electronics.
Criterion referenced Evaluation (Applicable only to targeted subjects for undergraduate students)	Program of Electronic Devices and Systems （Abilities and Skills） ・Ability to apply basic concepts, knowledge, and methods of electronics engineering to concrete/technical problems.
Class Objectives /Class Outline	Learn about operation principle and fabrication process of MOS transistors, which are the main elements of Large Scale Integrated Circuits: LSIs. Energy band diagrams are also necessary issues to learn.
Class Schedule	lesson1 Review of fundamentals of semiconductors lesson2 Review of fundamentals of semiconductors lesson3 Review of fundamentals of semiconductors lesson4 p-n junction lesson5 p-n junction lesson6 p-n junction・ Characteristics of MOS diodes lesson7 Characteristics of MOS diodes lesson8 Characteristics of MOS diodes lesson9 MOS transistors lesson10 Integrated CMOS circuits (Report) lesson11 Outline of fabrication process of LSI lesson12 Lithography・ Etching lesson13 Si oxide・ Check the answers of the report lesson14 Thin film deposition・ Impurity doping and ion implantation lesson15 Interconnects・ Limitation and Future prospect of LSI exercise may be performed at class, one mid-term report, and final examination or one final-term report. Operation principle and fabrication process of MOSFETs, and how to draw energy band diagrams are necessary issues to be mastered.
Text/Reference Books,etc.	References 1. 横山新著「デバイス・プロセス工学」 2. S.M. ジー著「半導体デバイス」南日他訳、産業図書　昭和62年 3. 「タウア・ニン　最新VLSIの基礎」丸善　2002年　芝原健太郎　監訳　竹内 潔・寺内 衛・寺田 和夫・堀 敦・宮本 恭幸　訳 4. 「半導体デバイス工学」石原宏　コロナ社 5. 「物性物理」家泰弘　産業図書 6.「ULSIデバイス・プロセス技術」伊藤隆司編者　電子情報通信学会 7.「次世代ULSIプロセス技術」廣瀬全孝編集委員長　リアライズ社 8.「VLSIプロセス技術」日刊工業新聞社 9.「半導体デバイスの物理」岸野正剛　丸善出版
PC or AV used in Class,etc.
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Learning techniques to be incorporated
Suggestions on Preparation and Review	Reviews should be done for every class.
Requirements	All classes should be attended in principle. The class of "Semicondcutor devices" are preferred to have learned before taking this class.
Grading Method	One mid-term report (10-40%), and examination or one final-term report (60-90%).
Practical Experience	Experienced
Summary of Practical Experience and Class Contents based on it	I have studied semiconductor devices and the fabrication processes in a company and Hiroshima university. The experiences partly relate to the lectures.
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